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FGH25T120SMD - IGBT

General Description

ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

Key Features

  • FS Trench Technology, Positive Temperature Coefficient.
  • High Speed Switching.
  • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A.
  • 100% of the Parts Tested for ILM (Note 1).
  • High Input Impedance.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - Field Stop, Trench 1200 V, 25 A FGH25T120SMD Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. Features • FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A • 100% of the Parts Tested for ILM (Note 1) • High Input Impedance • This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, Welder, UPS & PFC Applications www.onsemi.