Datasheet Details
| Part number | FGH30S150P |
|---|---|
| Manufacturer | onsemi |
| File Size | 421.18 KB |
| Description | IGBT |
| Datasheet |
 FGH30S150P Datasheet
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General Description
Using advanced field stop trench and shorted
anode technology,
ON Semiconductor’s shorted
anode trench IGBTs offer superior conduction and switching performances for soft switching applications.
The device can operate in parallel configuration with exceptional avalanche capability.
Key Features
- High Speed Switching.
- Low Saturation Voltage: VCE(sat) =1.85 V @ IC = 30 A.
- High Input Impedance.
- This Device is Pb.
- Free and is RoHS Compliant.