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FGH30S150P

Manufacturer: onsemi

FGH30S150P datasheet by onsemi.

FGH30S150P datasheet preview

FGH30S150P Datasheet Details

Part number FGH30S150P
Datasheet FGH30S150P-ONSemiconductor.pdf
File Size 421.18 KB
Manufacturer onsemi
Description IGBT
FGH30S150P page 2 FGH30S150P page 3

FGH30S150P Overview

Using advanced field stop trench and shorted−anode technology, ON Semiconductor’s shorted−anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.

FGH30S150P Key Features

  • High Speed Switching
  • Low Saturation Voltage: VCE(sat) =1.85 V @ IC = 30 A
  • High Input Impedance
  • This Device is Pb-Free and is RoHS pliant

FGH30S150P from other manufacturers

View FGH30S150P datasheet index

Brand Logo Part Number Description Other Manufacturers
Fairchild Semiconductor Logo FGH30S150P IGBT Fairchild Semiconductor
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