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FGH40N60SMD-F085 - IGBT

General Description

Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.

Key Features

  • Maximum Junction Temperature: TJ = 175C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ. ) @ IC = 40 A.
  • High Input Impedance.
  • Tightened Parameter Distribution.
  • AEC Qualified and PPAP Capable IGBT: AEC.
  • Q101.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Other Datasheets by onsemi

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - Field Stop 600 V, 40 A FGH40N60SMD-F085 Description Using Novel Field Stop IGBT Technology, onsemi’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features  Maximum Junction Temperature: TJ = 175C  Positive Temperature Co−efficient for Easy Parallel Operating  High Current Capability  Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.