FGH40N60SMDF-F085
Overview
Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ±20 V IC Collector Current TC = 25°C 80 A TC = 100°C 40 A ICM (Note 1) Pulsed Collector Current TC = 25°C 120 A PD Maximum Power Dissipation TC = 25°C 349 W TC = 100°C 174 W TJ Operating Junction Temperature -55 to +175 °C TSTG Storage Temperature Range -55 to +175 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Stresses exceeding those listed in the Maximum Ratings.
- Max Junction Temperature TJ = 175°C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 40 A
- High Input Impedance
- Fast Switching : EOFF = 6.25 uJ/A
- Tighten Parameter Distribution
- Qualified to Automotive Requirements of AEC-Q101
- This Device is Pb-Free and is RoHS Compliant
