Datasheet Summary
IGBT
- Ultra Field Stop
This Insulated Gate Bipolar Transistor (IGBT) Features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on- state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co- packaged free wheeling diode with a low forward voltage.
Features
- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- These are Pb- Free Devices
Typical Applications
- Solar Inverter
- Uninterruptible...