FGH40T65SPD-F085
Overview
Ratings Units VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 650 V ±20 V ±30 V IC Collector Current @ TC = 25°C 80 A Collector Current @ TC = 100°C 40 ICM Pulsed Collector Current (Note 2) 120 A IF Diode Forward Current @ TC =.
- Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ.) @ IC = 40 A
- 100% Of The Part Are Dynamically Tested (Note 1)
- Short Circuit Ruggedness > 5 mS @ 25°C
- Maximum Junction Temperature: TJ = 175°C
- Fast Switching
- Tight Parameter Distribution
- Positive Temperature Co-efficient for Easy Parallel Operating
- Co-Packed With Soft And Fast Recovery Diode
- AEC-Q101 Qualified and PPAP Capable
- This Device is Pb-Free and is RoHS Compliant
