• Part: FGH40T65SPD-F085
  • Manufacturer: onsemi
  • Size: 3.05 MB
Download FGH40T65SPD-F085 Datasheet PDF
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FGH40T65SPD-F085 Description

Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation.

FGH40T65SPD-F085 Key Features

  • Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ.) @ IC = 40 A
  • 100% Of The Part Are Dynamically Tested (Note 1)
  • Short Circuit Ruggedness > 5 mS @ 25°C
  • Maximum Junction Temperature: TJ = 175°C
  • Fast Switching
  • Tight Parameter Distribution
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • Co-Packed With Soft And Fast Recovery Diode
  • AEC-Q101 Qualified and PPAP Capable
  • This Device is Pb-Free and is RoHS pliant