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FGH40T65SPD-F085 - IGBT

General Description

Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching r

Key Features

  • Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ. ) @ IC = 40 A.
  • 100% Of The Part Are Dynamically Tested (Note 1).
  • Short Circuit Ruggedness > 5 mS @ 25°C.
  • Maximum Junction Temperature: TJ = 175°C.
  • Fast Switching.
  • Tight Parameter Distribution.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • Co.
  • Packed With Soft And Fast Recovery Diode.
  • AEC.
  • Q101 Qualified and PPAP Capable.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SPD-F085 Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation. Features • Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ.