Description
Using the novel field stop 3rd generation IGBT technology,
FGH40T65SPD
F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching r
Features
- Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ. ) @ IC = 40 A.
- 100% Of The Part Are Dynamically Tested (Note 1).
- Short Circuit Ruggedness > 5 mS @ 25°C.
- Maximum Junction Temperature: TJ = 175°C.
- Fast Switching.
- Tight Parameter Distribution.
- Positive Temperature Co.
- efficient for Easy Parallel Operating.
- Co.
- Packed With Soft And Fast Recovery Diode.
- AEC.
- Q101 Qualified and PPAP Capable.
FGH40T65SPD-F085 Datasheet
