FGH4L50T65MQDC50 Description
IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 50 A FGH4L50T65MQDC50 Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology in TO−247 4−lead package,.
FGH4L50T65MQDC50 Key Features
- Positive Temperature Coefficient for Easy Parallel Operation
- High Current Capability
- 100% of the Parts are Tested for ILM (Note 2)
- Smooth and Optimized Switching
- Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 50 A
- No Reserved Recovery / No Forward Recovery
- Tight Parameter Distribution
- RoHS pliant
FGH4L50T65MQDC50 Applications
- Positive Temperature Coefficient for Easy Parallel Operation