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FGH50N6S2D - N-Channel IGBT

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ON Semiconductor

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FGH50N6S2D N-Channel IGBT by ON Semiconductor - Datasheet Preview — Datasheet preview – FGH50N6S2D

Datasheet Details

Part number	FGH50N6S2D
Manufacturer	ON Semiconductor
File Size	394.43 KB
Description	N-Channel IGBT
Datasheet	FGH50N6S2D Datasheet
Additional preview pages of the FGH50N6S2D datasheet.

Product details

Description

SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS).

These LGC devices shorten delay times, and reduce the power requirement of the gate drive.

Features

100 kHz Operation at 390 V, 40 A.
200 kHz Operation at 390 V, 25 A.
600 V Switching SOA Capability.
Typical Fall Time.
Low Gate Charge 90 ns at TJ = 125°C 70 nC at VGE = 15 V.
Low Plateau Voltage 6.5 V Typical.
UIS Rated 480 mJ.
Low Conduction Loss.
This is a Pb.
Free Device www. onsemi. com C G E E C G TO.
247.
3LD CASE 340CK.

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Published: Oct 3, 2022 |