FGH50T65UPD Overview
Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.
FGH50T65UPD Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 50 A
- 100% of Parts Tested ILM (Note 2)
- High Input Impedance
- Tightened Parameter Distribution
- Short Circuit Ruggedness > 5 ms @ 25°C
- This Device is Pb-Free and is RoHS pliant
