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FGH60T65SHD - 60A Field Stop Trench IGBT

Datasheet Summary

Description

series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.6 V (Typ. ) @ IC = 60 A.
  • 100% of the Parts Tested for ILM (Note 1).
  • High Input Impedance.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number FGH60T65SHD
Manufacturer ON Semiconductor
File Size 672.01 KB
Description 60A Field Stop Trench IGBT
Datasheet download datasheet FGH60T65SHD Datasheet
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IGBT - Field Stop, Trench 650 V, 60 A FGH60T65SHD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 60 A • 100% of the Parts Tested for ILM (Note 1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC www.onsemi.
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