FGH60T65SHD Datasheet | onsemi

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, tele, ESS and PFC applications where low conduction and switching losses are essential. Features - Maximum Junction Temperature: TJ = 175°C - Positive Temperature Co- efficient for Easy Parallel Operating - High Current Capability - Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 60 A - 100% of the Parts Tested for ILM (Note 1) - High Input Impedance - Fast Switching - Tighten Parameter Distribution - This Device is Pb- Free and is Ro HS pliant Applications - Solar Inverter, UPS, Welder, Tele, ESS, PFC .onsemi. C G E E C G TO- 247- 3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH60T65 SHD $Y &Z &3 &K FGH60T65SHD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor ponents Industries, LLC, 2014 December, 2020 - Rev. 3 Publication Order Number: FGH60T65SHD/D ABSOLUTE MAXIMUM RATINGS Description Symbol FGH60T65SHD- F155 Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES VGES ±20 ±30...