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FGH80N60FD - IGBT

General Description

field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Key Features

  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A.
  • High Input Impedance.
  • Fast Switching.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - Field Stop 600 V, 80 A FGH80N60FD Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • This Device is Pb−Free and is RoHS Compliant Applications • Induction Heating, PFC, Telecom, ESS www.onsemi.