FGY4L160T120SWD Description
Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, FGY4L160T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar Inverter, UPS and ESS.
FGY4L160T120SWD Key Features
- Maximum Junction Temperature TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operation
- High Current Capability
- Smooth and Optimized Switching
- Low Switching Loss
- RoHS pliant