FGY4L160T120SWD - N-Channel IGBT

Datasheet Summary

Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4 lead package, FGY4L160T120SWD offers the optimum performance with low switching and conduction losses for high

efficiency operations in various applications like Solar Inverter, UPS and ESS.

Features

Maximum Junction Temperature TJ = 175°C.
Positive Temperature Coefficient for Easy Parallel Operation.
High Current Capability.
Smooth and Optimized Switching.
Low Switching Loss.
RoHS Compliant.

ON Semiconductor

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Datasheet Details

Part number	FGY4L160T120SWD
Manufacturer	ON Semiconductor
File Size	233.73 KB
Description	N-Channel IGBT
Datasheet	FGY4L160T120SWD Datasheet
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Full PDF Text Transcription

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IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), TO247-4L 1200 V, 1.7 V, 160 A FGY4L160T120SWD Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, FGY4L160T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar Inverter, UPS and ESS.

Published: Sep 1, 2024 |