FGY4L160T120SWD
Description
Using the novel field stop 7th generation IGBT technology and the
Gen7 Diode in TO247 4- lead package, FGY4L160T120SWD offers the optimum performance with low switching and conduction losses for high- efficiency operations in various applications like Solar Inverter, UPS and ESS.
Features
- Maximum Junction Temperature TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operation
- High Current Capability
- Smooth and Optimized Switching
- Low Switching Loss
- Ro HS pliant
Applications
- Solar Inverter
- UPS
- Energy Storage System
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector- to- Emitter Voltage Gate- to- Emitter Voltage Transient Gate- to- Emitter Voltage
1200 V
±20
±30
Collector Current
TC = 25°C (Note 1)
TC = 100°C
Power Dissipation
TC = 25°C
TC = 100°C
Pulsed Collector Current
TC = 25°C, tp = 10 ms (Note 2)
Diode Forward Current
TC = 25°C (Note 1) TC = 100°C
Pulsed Diode Forward TC =...
