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Ultra Field Stop IGBT, 1200 V, 60 A
FGY60T120SQDN
General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features
• Extremely Efficient Trench with Field Stop Technology • Maximum Junction Temperature TJ = 175°C • Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.
FGY60T120SQDN Datasheet
