FGY60T120SQDN
Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications.
Key Features
- Extremely Efficient Trench with Field Stop Technology
- Maximum Junction Temperature TJ = 175°C
- Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 60 A
- 100% of the Parts Tested for ILM (Note 1)
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- RoHS Compliant
