FJL4215
FJL4215 is PNP Epitaxial Silicon Transistor manufactured by onsemi.
Features
- High Current Capability: IC = 17 A
- High Power Dissipation: 150 W
- High Frequency: 30 MHz
- High Voltage: VCEO =
- 250 V
- Wide S.O.A. for Reliable Operation
- Excellent Gain Linearity for Low THD
- plement to 2SC5200 / FJL4315
- Thermal and Electrical Spice Models are Available
- Same Transistor is also Available in:
- TO3P Package, 2SA1962 / FJA4213 : 130 Watts
- TO220 Package, FJP1943 : 80 Watts
- TO220F Package, FJPF1943 : 50 Watts
- These Devices are Pb- Free and are Ro HS pliant
Applications
- High- Fidelity Audio Output Amplifier
- General Purpose Power Amplifier
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Ratings Units
Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current (DC) Base Current Total Device Dissipation (TC = 25°C) Derate Above 25°C
BVCBO BVCEO BVEBO
IC IB PD
- 250
- 250
- 5
- 17
- 1.5 150 1.04
V V V A A W W/°C
Junction and Storage Temperature
TJ, TSTG
- 50 ~ +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Note 1) (TA = 25°C unless otherwise noted)
Parameter
Symbol
Thermal Resistance, Junction to Case 1. Device mounted on minimum pad size.
Rq...
