FJV42 - NPN High-Voltage Transistor

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ON Semiconductor

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Part number	FJV42
Manufacturer	ON Semiconductor
File Size	151.76 KB
Description	NPN High-Voltage Transistor
Datasheet	FJV42 Datasheet
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NPN High-Voltage Transistor FJV42 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VCEO Collector−Emitter Voltage 350 V VCBO Collector−Base Voltage 350 V VEBO Emitter−Base Voltage 6 V IC Collector Current 500 mA TSTG Storage Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit PD Power Dissipation 350 mW RqJA Thermal Resistance, Junction−to−Ambient 357 °C/W 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.

Published: Sep 1, 2024 |