FOD819
Description
The FOD819 consists of a gallium arsenide (Ga As) infra- red emitting diode, driving a high speed photo detector with integrated base- to- emitter resistor, RBE, in a 4- pin dual- in- line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.
Features
- High Speed Performance ~ 30 k Hz
- Current Transfer Ratio: 100% to 600%
- Minimum BVCEO of 80 V Guaranteed
- Safety and Regulatory Approvals:
- UL1577, 5,000 VACRMS for 1 Minute
- DIN EN/IEC60747- 5- 5, 850 V Peak Working Insulation Voltage
Typical Applications
- Digital Logic Inputs
- Microprocessor Inputs
- Power Supply Monitor
- Twisted Pair Line Receiver
- Telephone Line Receiver
.onsemi.
DIP 4 PINS MARKING DIAGRAM
1. ON 2. 819 3. V 4X 5. ZZ 6. Y
= pany Logo = Device Number = DIN EN/IEC60747- 5- 5 Option = One- Digit Year Code = Digit Work Week = Assembly Package Code
PIN CONNECTIONS
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