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FOD8342T - High Speed Gate Drive Optocoupler

Download the FOD8342T datasheet PDF. This datasheet also covers the FOD8342 variant, as both devices belong to the same high speed gate drive optocoupler family and are provided as variant models within a single manufacturer datasheet.

General Description

The FOD8342 series is a 3.0 A output current gate drive optocoupler, capable of driving medium

power IGBT/ MOSFETs.

switching driving of power IGBT and MOSFET used in motor control inverter applications, and high performance power systems

Key Features

  • FOD8342T.
  • 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High.
  • Voltage Insulation.
  • 3.0 A Peak Output Current Driving Capability for Medium.
  • Power IGBT/MOSFET.
  • Use of P.
  • Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail.
  • 20 kV/ms Minimum Common Mode Rejection.
  • Wide Supply Voltage Range: 10 V to 30 V.
  • Fast Switching Speed Over Full Oper.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FOD8342-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FOD8342T
Manufacturer onsemi
File Size 357.60 KB
Description High Speed Gate Drive Optocoupler
Datasheet download datasheet FOD8342T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com 3.0 A Output Current, High Speed Gate Drive Optocoupler in Stretched Body SOP 6-Pin FOD8342, FOD8342T SOIC6 CASE 751EL SOIC6 W CASE 751EM Description The FOD8342 series is a 3.0 A output current gate drive optocoupler, capable of driving medium−power IGBT/ MOSFETs. It is ideally suited for fast−switching driving of power IGBT and MOSFET used in motor−control inverter applications, and high−performance power systems. The FOD8342 series utilizes stretched body package to achieve 8 mm creepage and clearance distances (FOD8342T), and optimized IC design to achieve reliably high−insulation voltage and high−noise immunity.