FODM181A - Phototransistor Optocoupler

onsemi

Key Features

Current Transfer Ratio Ranges from 20 to 600%.
at IF = 5 mA, VCE = 5 V, TA = 25°C.
FODM181A.
80 to 160%.
FODM181B.
130 to 260%.
FODM181C.
200 to 400%.
FODM181D.
300 to 600%.
Safety and Regulatory Approvals:.
UL1577, 3750 VACRMS for 1 min.
DIN EN/IEC60747.
5.
5, 565 V Peak Working Insulation Voltage (Pending).
Applicable to Infrared Ray Reflow, 260°C Typical.

FODM181A phototransistor optocoupler by onsemi - Datasheet Preview

Datasheet Details

Part number	FODM181A
Manufacturer	onsemi
File Size	378.79 KB
Description	Phototransistor Optocoupler
Datasheet	FODM181A Datasheet

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Other Datasheets by onsemi

Part Number	Description
FODM181B	Phototransistor Optocoupler
FODM181C	Phototransistor Optocoupler
FODM181D	Phototransistor Optocoupler
FODM214	Phototransistor Optocoupler
FODM217	Phototransistor Optocoupler

Full PDF Text Transcription (Reference)

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DATA SHEET www.onsemi.com Single Channel, DC Sensing Input, Phototransistor Optocoupler In Full-Pitch Mini-Flat 4-Pin Package Product Preview FODM181 Series The FODM181 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 2.54 mm.