FODM217 - Phototransistor Optocoupler

onsemi

Key Features

Current Transfer Ratio Ranges from 20 to 600% at IF = ±1 mA, VCE = 5 V, TA = 25°C.
FODM214.
20 to 400%.
FODM214A.
50 to 250% at IF = 5 mA, VCE = 5 V, TA = 25°C.
FODM217A.
80 to 160%.
FODM217B.
130 to 260%.
FODM217C.
200 to 400%.
FODM217D.
300 to 600%.
Safety and Regulatory Approvals:.
UL1577, 3750 VACRMS for 1 min.
DIN EN/IEC60747.
5.
5, 5.

FODM217 phototransistor optocoupler by onsemi - Datasheet Preview

Datasheet Details

Part number	FODM217
Manufacturer	onsemi
File Size	240.68 KB
Description	Phototransistor Optocoupler
Datasheet	FODM217 Datasheet

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Other Datasheets by onsemi

Part Number	Description
FODM214	Phototransistor Optocoupler
FODM291	Phototransistor Optocoupler
FODM291A	Phototransistor Optocoupler
FODM291B	Phototransistor Optocoupler
FODM291C	Phototransistor Optocoupler

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com Single Channel, AC/DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package FODM214, FODM217 Series The FODM217 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. The FODM214 series consist of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. Both were built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 1.27 mm.