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FODM8801C - High-Temperature Phototransistor Optocoupler

This page provides the datasheet information for the FODM8801C, a member of the FODM8801A High-Temperature Phototransistor Optocoupler family.

Datasheet Summary

Description

In the OptoHiT series, the FODM8801 is a first of kind phototransistor, utilizing onsemi’s leading

edge proprietary process technology to achieve high operating temperature characteristics, up to 125°C.

coupler consists of an aluminum gallium arsenide (AlGaAs

Features

  • Utilizing Proprietary Process Technology to Achieve High Operating Temperature: Up to 125°C.
  • Guaranteed Current Transfer Ratio (CTR) Specifications Across Full Temperature Range.
  • Excellent CTR Linearity at High.
  • Temperature.
  • CTR at Very Low Input Current, IF.
  • High Isolation Voltage Regulated by Safety Agency: C.
  • UL / UL1577, 3750 VACRMS for 1 Minute and DIN EN/IEC60747.
  • 5.
  • 5.
  • Compact Half.
  • Pitch, Mini.

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Datasheet preview – FODM8801C

Datasheet Details

Part number FODM8801C
Manufacturer ON Semiconductor
File Size 198.70 KB
Description High-Temperature Phototransistor Optocoupler
Datasheet download datasheet FODM8801C Datasheet
Additional preview pages of the FODM8801C datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com OptoHiTE Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package HALF−PITCH MINI−FLAT MFP4 2.5 x 4.4, 1.27P CASE 100AL FODM8801A, FODM8801B, FODM8801C Description In the OptoHiT series, the FODM8801 is a first−of−kind phototransistor, utilizing onsemi’s leading−edge proprietary process technology to achieve high operating temperature characteristics, up to 125°C. The opto−coupler consists of an aluminum gallium arsenide (AlGaAs) infrared light−emitting diode (LED) optically coupled to a phototransistor, available in a compact half−pitch, mini− flat, 4−pin package. It delivers high current transfer ratio at very low input current. The input−output isolation voltage, VISO, is rated at 3750 VACRMS.
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