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FQA11N90C-F109 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: FQA11N90C-F109 — N-Channel QFET® MOSFET FQA11N90C-F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.

General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and elec-tronic lamp ballasts.

Key Features

  • 11 A, 900 V, RDS(on) = 1.1 Ω (Max. ) @ VGS = 10 V, ID = 5.5 A.
  • Low Gate Charge (Typ. 60 nC).
  • Low Crss (Typ. 23 pF).
  • 100% Avalanche Tested.
  • RoHS compliant.

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