FQA11N90C-F109
Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A
- Low Gate Charge (Typ. 60 nC)
- Low Crss (Typ. 23 pF)
- 100% Avalanche Tested
