Datasheet4U Logo Datasheet4U.com

FQB5N90 - N-Channel MOSFET

General Description

ID = 2.7 A This N-Channel enhancement mode power MOSFET is

Low Gate Charge (Typ.

produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Low Crss (Typ.

Key Features

  • 5.4 A, 900 V, RDS(on) = 2.3 Ω (Max. ) @ VGS = 10 V,.

📥 Download Datasheet

Datasheet Details

Part number FQB5N90
Manufacturer onsemi
File Size 869.07 KB
Description N-Channel MOSFET
Datasheet download datasheet FQB5N90 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQB5N90 900V N-Channel MOSFET Fairchild Semiconductor
FQB5N15 150V N-Channel MOSFET Fairchild Semiconductor
FQB5N20 200V N-Channel MOSFET Fairchild Semiconductor
FQB5N20L 200V LOGIC N-Channel MOSFET Fairchild Semiconductor
FQB5N30 300V N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FQB10N50CF N-Channel MOSFET
FQB22P10TM-F085 P-Channel MOSFET
FQB25N33TM-F085 N-Channel MOSFET
FQB27N25TM-F085 N-Channel MOSFET
FQB34N20 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQB5N90 — N-Channel QFET® MOSFET FQB5N90 N-Channel QFET® MOSFET 900 V, 5.4 A, 2.3 Ω Features • 5.4 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, Description ID = 2.7 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 31 nC) produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET • Low Crss (Typ. 13 pF) technology has been especially tailored to reduce on-state • 100% Avalanche Tested resistance, and to provide superior switching performance and high avalanche energy strength. These devices are • RoHS Compliant suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G S D2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted.