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FQD18N20V2 - N-Channel MOSFET

General Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

  • 15 A, 200 V, RDS(on) = 140 mΩ (Max. ) @ VGS = 10 V, ID = 7.5 A.
  • Low Gate Charge (Typ. 20 nC).
  • Low Crss (Typ. 25 pF).
  • 100% Avalanche Tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, QFET 200 V, 15 A, 140 mW FQD18N20V2 Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 15 A, 200 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ.