FQD3P50TM-F085 Datasheet | onsemi

FQD3P50TM-F085 500V P-Channel MOSFET FQD3P50TM-F085 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for electronic lamp ballast based on plimentary half bridge. Features - -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V - Low gate charge ( typical 18 nC) - Low Crss ( typical 9.5 pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Qualified to AEC Q101 - RoHS...