FQD3P50TM-F085
Description
These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.
Key Features
- 2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V
- Low gate charge ( typical 18 nC)
- Low Crss ( typical 9.5 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Qualified to AEC Q101
- RoHS pliant S D ! GS D-PAK
