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FQD4N25 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 3 A, 250 V, RDS(on) = 1.75 Ω (Max. ) @ VGS = 10 V, ID = 1.5 A.
  • Low Gate Charge (Typ. 4.3 nC).
  • Low Crss (Typ. 4.8 pF).
  • 100% Avalanche Tested G S D D-PAK D G Absolute Maximum Ratings TC = 25°C unless otherwise noted.  + 7 7 + < 7 < !$ :         +             2-).
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Datasheet Details

Part number FQD4N25
Manufacturer ON Semiconductor
File Size 919.21 KB
Description N-Channel MOSFET
Datasheet download datasheet FQD4N25 Datasheet
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FQD4N25 — N-Channel QFET® MOSFET FQD4N25 N-Channel QFET® MOSFET 250 V, 3 A, 1.75 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 3 A, 250 V, RDS(on) = 1.75 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 4.3 nC) • Low Crss (Typ. 4.8 pF) • 100% Avalanche Tested G S D D-PAK D G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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