FQD4P40 Datasheet | onsemi

Features - -2.7 A, -400 V, RDS(on) = 3.1 Ω (Max.) @ VGS = -10 V, Description N These P-Channel enhancement mode power field effect IG transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This S advanced technology has been especially tailored to E minimize on-state resistance, provide superior switching D D performance, and withstand high energy pulse in the W avalanche and mutation mode. These devices are E E well suited for electronic lamp ballast based on N plimentary half bridge. ID = -1.35 A - Low Gate Charge (Typ. 18 n C) - Low Crss (Typ. 11 p F) - 100% Avalanche Tested UOR i S INED F nsem TION D D o A G T N R M G E U R S D-PAK NOMM T YO INFO Absolute Maximum Ratings TC = 25o C unless otherwise noted. OEC AC R Symbol C T R NT FO VDSS O O E ID ISIS N E C TIV IDM S TA VGSS E A N EAS DVIC PLE SE IAR E EAR E R dv/dt THIS D REP PD Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) - Power Dissipation (TC = 25°C) - Derate above 25°C (Note 1) (Note 2) (Note 1) (Note 1) (Note...