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FQD4P40 - P-Channel MOSFET

General Description

proprietary, planar stripe, DMOS technology.

Key Features

  • -2.7 A, -400 V, RDS(on) = 3.1 Ω (Max. ) @ VGS = -10 V,.

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Datasheet Details

Part number FQD4P40
Manufacturer onsemi
File Size 1.51 MB
Description P-Channel MOSFET
Datasheet download datasheet FQD4P40 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQD4P40 — P-Channel QFET® MOSFET FQD4P40 P-Channel QFET® MOSFET -400 V, -2.7 A, 3.1 Ω Features • -2.7 A, -400 V, RDS(on) = 3.1 Ω (Max.) @ VGS = -10 V, Description N These P-Channel enhancement mode power field effect IG transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This S advanced technology has been especially tailored to E minimize on-state resistance, provide superior switching D D performance, and withstand high energy pulse in the W avalanche and commutation mode. These devices are E E well suited for electronic lamp ballast based on N complimentary half bridge. ID = -1.35 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ.