FQD4P40 Description
N These P-Channel enhancement mode power field effect IG transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This S advanced technology has been especially tailored to E minimize on-state resistance, provide superior switching D D performance, and withstand high energy pulse in the W avalanche and mutation mode. These devices are E E well suited for electronic lamp ballast...
FQD4P40 Key Features
- 2.7 A, -400 V, RDS(on) = 3.1 Ω (Max.) @ VGS = -10 V
- Low Gate Charge (Typ. 18 nC)
- Low Crss (Typ. 11 pF)
- 100% Avalanche Tested