FQH8N100C - N-Channel MOSFET

onsemi

General Description

This N

using ON Semiconductor’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanch

Key Features

8 A, 1000 V, RDS(on) = 1.45ĂW (Max. ) @ VGS = 10 V.
Low Gate Charge (Typ. 53 nC).
Low Crss (Typ. 16 pF).
Fast Switching.
100% Avalanche Tested.
Improved dv/dt Capability.
This Device is Pb.
Free and is RoHS Compliant www. onsemi. com VDS 1000 V RDS(ON) MAX 1.45 W @ 10 V D ID MAX 8A G S N-.

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FQH8N100C n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FQH8N100C
Manufacturer	onsemi
File Size	420.08 KB
Description	N-Channel MOSFET
Datasheet	FQH8N100C Datasheet

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MOSFET – N-Channel, QFET) 1000 V, 8.0 A, 1.45 W FQH8N100C Description This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 8 A, 1000 V, RDS(on) = 1.45ĂW (Max.) @ VGS = 10 V • Low Gate Charge (Typ. 53 nC) • Low Crss (Typ. 16 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • This Device is Pb−Free and is RoHS Compliant www.onsemi.com VDS 1000 V RDS(ON) MAX 1.