FQH8N100C Overview
This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic...
FQH8N100C Key Features
- 8 A, 1000 V, RDS(on) = 1.45ĂW (Max.) @ VGS = 10 V
- Low Gate Charge (Typ. 53 nC)
- Low Crss (Typ. 16 pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- This Device is Pb-Free and is RoHS pliant
- Rev. 3
