FQH8N100C
Description
This N- Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on- state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 8 A, 1000 V, RDS(on) = 1.45ĂW (Max.) @ VGS = 10 V
- Low Gate Charge (Typ. 53 n C)
- Low Crss (Typ. 16 p F)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- This Device is Pb- Free and is Ro HS pliant
.onsemi.
VDS 1000 V
RDS(ON) MAX 1.45 W @ 10 V
ID MAX 8A
S N-CHANNEL MOSFET
G DS TO- 247- 3LD CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K FQH 8N100C
© Semiconductor ponents Industries, LLC, 2008
February, 2020
- Rev. 3
$Y &Z &3 &K FQH8N100C
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code =...
