FQP17N40 - N-Channel MOSFET

onsemi

General Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

16 A, 400 V RDS(on) = 270 mW (Max. ) @ VGS = 10 V, ID = 8.0 A.
Low Gate Charge (Typ. 45 nC).
Low Crss (Typ. 30 pF).
100% Avalanche Tested.
This Device is Pb.
Free.

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FQP17N40 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FQP17N40
Manufacturer	onsemi
File Size	302.31 KB
Description	N-Channel MOSFET
Datasheet	FQP17N40 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, QFET 400 V, 16 A, 270 mW FQP17N40 Description This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 16 A, 400 V RDS(on) = 270 mW (Max.) @ VGS = 10 V, ID = 8.0 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested • This Device is Pb−Free. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.