FQP3N60C Key Features
- 3.0 A, 600 V, RDS(on) = 3.4 W (Max.) at VGS = 10 V, ID = 1.5 A
- Low Gate Charge (Typ. 10.5 nC)
- Low Crss (Typ. 5.0 pF)
- 100% Avalanche Tested
- This is a Pb-Free Device
- Part: FQP3N60C
- Description: N-Channel MOSFET
- Manufacturer: onsemi
- Size: 351.28 KB
Other FQP3N60C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild Semiconductor |
FQP3N60C | N-Channel MOSFET |
|
Fairchild Semiconductor |
FQP3N60 | 600V N-Channel MOSFET |