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FQP47P06 - P-Channel MOSFET

General Description

This P

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

  • 47 A,.
  • 60 V, RDS(on) = 26 mW (Max. ) @ VGS =.
  • 10 V, ID =.
  • 23.5 A.
  • Low Gate Charge (Typ. 84 nC).
  • Low Crss (Typ. 320 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating DATA SHEET www. onsemi. com VDSS.
  • 60 V RDS(on) MAX 26 mW @.
  • 10 V ID MAX.
  • 47 A S G D P.
  • Channel MOSFET GDS TO.
  • 220.
  • 3LD CASE 340AT.

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Datasheet Details

Part number FQP47P06
Manufacturer onsemi
File Size 285.69 KB
Description P-Channel MOSFET
Datasheet download datasheet FQP47P06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, QFET) -60 V, -47 A, 26 mW FQP47P06 Description This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • −47 A, −60 V, RDS(on) = 26 mW (Max.) @ VGS = −10 V, ID = −23.5 A • Low Gate Charge (Typ. 84 nC) • Low Crss (Typ. 320 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating DATA SHEET www.onsemi.