FQP50N06L - N-Channel MOSFET

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ON Semiconductor

Part number	FQP50N06L
Manufacturer	ON Semiconductor
File Size	1.12 MB
Description	N-Channel MOSFET
Datasheet	FQP50N06L Datasheet
Additional preview pages of the FQP50N06L datasheet.

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

52.4 A, 60 V, RDS(on) = 21 mΩ (Max. ) @ VGS = 10 V, ID = 26.2 A.
Low Gate Charge (Typ. 24.5 nC).
Low Crss (Typ. 90 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Sou.

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Published: Sep 2, 2024 |