FQP50N06L Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: FQP50N06L — N-Channel QFET® MOSFET FQP50N06L N-Channel QFET® MOSFET 60 V, 52.

Datasheet Details

Part number	FQP50N06L
Manufacturer	onsemi
File Size	1.12 MB
Description	N-Channel MOSFET
Datasheet	FQP50N06L-ONSemiconductor.pdf

General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

52.4 A, 60 V, RDS(on) = 21 mΩ (Max. ) @ VGS = 10 V, ID = 26.2 A.
Low Gate Charge (Typ. 24.5 nC).
Low Crss (Typ. 90 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Sou.

FQP50N06L Distributor

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