FQP50N06L
Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A
- Low Gate Charge (Typ. 24.5 nC)
- Low Crss (Typ. 90 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
- GDS TO-220 G
