FQP8N90C
FQP8N90C is N-Channel MOSFET manufactured by onsemi.
Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.15 A
- Low Gate Charge (Typ. 35 n C)
- Low Crss (Typ. 12 p F)
- 100% Avalanche Tested
TO-220
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ, TSTG TL
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds
- Drain current limited by maximum junction temperature.
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
FQP8N90C...
