Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V, ID = 3.15 A.
- Low Gate Charge (Typ. 35 nC).
- Low Crss (Typ. 12 pF).
- 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanc.
FQP8N90C Datasheet
