FQP9N30
Description
This N- Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on- state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 9.0 A, 300 V, RDS(on) = 450 m W (Max.) @ VGS = 10 V,
ID = 4.5 A
- Low Gate Charge (Typ. 17 n C)
- Low Crss (Typ. 16 p F)
- 100% Avalanche Tested
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)
Parameter
Symbol Value Unit
Drain- Source Voltage Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C) Drain Current
- Pulsed (Note 1) Gate- Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
VDSS ID
IDM VGSS EAS IAR EAR...
