Click to expand full text
MOSFET – N-Channel, QFET)
900 V, 8.0 A, 1.4 W
FQP9N90C, FQPF9N90CT
Description This N−Channel enhancement mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 8 A 900 V, RDS(on) = 1.4 W (Max.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 14 pF) • 100% Avalanche Tested • This Device is Pb−Free Halide, Free and RoHS Compliant.
DATA SHEET www.onsemi.
FQP9N90C Datasheet
