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FQPF27P06 - P-Channel MOSFET

General Description

This P

using ON Semiconductor’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanch

Key Features

  • 17 A,.
  • 60 V, RDS(on) = 70 mW (Max. ) @ VGS =.
  • 10 V, ID =.
  • 8.5 A.
  • Low Gate Charge (Typ. 33 nC).
  • Low Crss (Typ. 120 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating www. onsemi. com VDSS.
  • 60 V RDS(ON) MAX 70 mW @ 10 V S ID MAX.
  • 17 A G D P.
  • Channel MOSFET GD S TO.
  • 220F TO.
  • 220 Fullpack, 3.
  • Lead / TO.
  • 220F.
  • 3SG CASE 221AT.

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Datasheet Details

Part number FQPF27P06
Manufacturer onsemi
File Size 322.13 KB
Description P-Channel MOSFET
Datasheet download datasheet FQPF27P06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, QFET) -60 V, -17 A, 70 mW FQPF27P06 Description This P−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • −17 A, −60 V, RDS(on) = 70 mW (Max.) @ VGS = −10 V, ID = −8.5 A • Low Gate Charge (Typ. 33 nC) • Low Crss (Typ. 120 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating www.onsemi.