Description
This P
using ON Semiconductor’s proprietary planar stripe and DMOS technology.
state resistance, and to provide superior switching performance and high avalanch
Features
- 17 A,.
- 60 V, RDS(on) = 70 mW (Max. ) @ VGS =.
- 10 V, ID =.
- 8.5 A.
- Low Gate Charge (Typ. 33 nC).
- Low Crss (Typ. 120 pF).
- 100% Avalanche Tested.
- 175°C Maximum Junction Temperature Rating
www. onsemi. com
VDSS.
- 60 V
RDS(ON) MAX 70 mW @ 10 V
S
ID MAX.
- 17 A
G
D P.
- Channel MOSFET
GD S
TO.
- 220F
TO.
- 220 Fullpack, 3.
- Lead / TO.
- 220F.
- 3SG CASE 221AT.
FQPF27P06 Datasheet
