FQPF27P06
Description
This P- Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on- state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
- - 17 A,
- 60 V, RDS(on) = 70 m W (Max.) @ VGS =
- 10 V, ID =
- 8.5 A
- Low Gate Charge (Typ. 33 n C)
- Low Crss (Typ. 120 p F)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
DATA SHEET .onsemi.
VDSS
- 60 V
RDS(ON) MAX 70 m W @ 10 V
ID MAX
- 17 A
D P- Channel MOSFET
G DS
TO- 220F
TO- 220 Fullpack, 3- Lead / TO- 220F- 3SG CASE 221AT
MARKING DIAGRAM
FQPF 27P06 AYWWZZ
FQPF27P06 = Specific Device Code
= Assembly Location
= Date Code (Year & Work Week)
= Assembly Lot
ORDERING INFORMATION
Device
Package
Shi...
