FQPF7P20 Datasheet | onsemi

Description This P- Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on- state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features - - 5.2 A, - 200 V, RDS(on) = 690 m W (Max.) @ VGS = - 10 V, ID = - 2.6 A - Low Gate Charge (Typ. 19 n C) - Low Crss (Typ. 25 p F) - 100% Avalanche Tested DATA SHEET .onsemi. G DS TO- 220 Fullpack, 3- Lead / TO- 220F- 3SG CASE 221AT N- CHANNEL MOSFET D MARKING DIAGRAM FQPF 7P20 AYWWZZ FQPF7P20 A YWW ZZ = Specific Device Code = Assembly Location = Date Code (Year & Week) = Assembly Lot ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor ponents Industries, LLC, 2000 January, 2024 - Rev. 3 Publication Order Number: FQPF7P20/D ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS ID Drain- Source Voltage Drain Current IDM VGSS EAS IAR EAR dv/dt Drain Current Gate- Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) - Continuous (TC = 25°C) - Continuous (TC =...