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FQPF7P20 - P-Channel MOSFET

General Description

This P

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

  • 5.2 A,.
  • 200 V, RDS(on) = 690 mW (Max. ) @ VGS =.
  • 10 V, ID =.
  • 2.6 A.
  • Low Gate Charge (Typ. 19 nC).
  • Low Crss (Typ. 25 pF).
  • 100% Avalanche Tested DATA SHEET www. onsemi. com G DS TO.
  • 220 Fullpack, 3.
  • Lead / TO.
  • 220F.
  • 3SG CASE 221AT N.

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Datasheet Details

Part number FQPF7P20
Manufacturer onsemi
File Size 247.11 KB
Description P-Channel MOSFET
Datasheet download datasheet FQPF7P20 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, QFET -200 V, -5.2 A, 690 mW FQPF7P20 Description This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • −5.2 A, −200 V, RDS(on) = 690 mW (Max.) @ VGS = −10 V, ID = −2.6 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested DATA SHEET www.onsemi.