Datasheet4U Logo Datasheet4U.com

FQPF8N90C - N-Channel MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V, ID = 3.15 A.
  • Low Gate Charge (Typ. 35 nC).
  • Low Crss (Typ. 12 pF).
  • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanc.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQPF8N90C 900V N-Channel MOSFET Fairchild Semiconductor
FQPF8N50 9A N-Channel MOSFET OuCan
FQPF8N60 N-Channel Mosfet Transistor Inchange Semiconductor
FQPF8N60 600V N-Channel MOSFET AOKE
FQPF8N60 8A N-Channel MOSFET OuCan

Other Datasheets by onsemi

Part Number Description
FQPF13N50C N-Channel MOSFET
FQPF27P06 P-Channel MOSFET
FQPF3N50C 500V N-Channel MOSFET
FQPF47P06 P-Channel MOSFET
FQPF47P06YDTU P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQP8N90C / FQPF8N90C — N-Channel QFET® MOSFET www.onsemi.com FQP8N90C / FQPF8N90C N-Channel QFET® MOSFET 900 V, 6.3 A, 1.9 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.15 A • Low Gate Charge (Typ. 35 nC) • Low Crss (Typ.