FQU2N50B
Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
- 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V, ID = 0.8 A
- Low Gate Charge (Typ. 6.0 n C)
- Low Crss (Typ. 4.3 p F)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
I-PAK
Absolute Maximum Ratings TC = 25o C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive...
