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FQU2N50B - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max. ) @ VGS = 10 V, ID = 0.8 A.
  • Low Gate Charge (Typ. 6.0 nC).
  • Low Crss (Typ. 4.3 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability D GDS I-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Ga.

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Datasheet Details

Part number FQU2N50B
Manufacturer ON Semiconductor
File Size 850.08 KB
Description N-Channel MOSFET
Datasheet download datasheet FQU2N50B Datasheet
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Full PDF Text Transcription

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FQU2N50B — N-Channel QFET® MOSFET FQU2N50B N-Channel QFET® MOSFET 500 V, 1.6 A, 5.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V, ID = 0.8 A • Low Gate Charge (Typ. 6.0 nC) • Low Crss (Typ. 4.
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