• Part: FQU3N60CTU
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 308.95 KB
Download FQU3N60CTU Datasheet PDF
onsemi
FQU3N60CTU
Features - 2.4 A, 600 V, RDS(on) = 3.4 W (Max.) @ VGS = 10 V, ID = 1.2 A - Low Gate Charge (Typ. 10.5 n C) - Low Crss (Typ. 5 p F) - 100% Avalanche Tested - These Devices are Pb- Free and are Ro HS pliant Applications - LCD / LED TV - Lighting - Charger / Adapter .onsemi. D IPAK3 CASE 369AR ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. © Semiconductor ponents Industries, LLC, 2018 May, 2019 - Rev. 0 Publication Order Number: FQU3N60CTU/D MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS Drain- to- Source Voltage Gate- to- Source Voltage Drain Current IDM EAS IAR EAR dv/dt Drain Current Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery (Note 3) ±30 Continuous (TC = 25°C) Continuous (TC = 100°C) Pulsed (Note 1) 150 m...