FQU3N60CTU Overview
FQU3N60CTU N-Channel QFET) MOSFET 600 V, 2.4 A, 3.4 W This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies,...
FQU3N60CTU Key Features
- 2.4 A, 600 V, RDS(on) = 3.4 W (Max.) @ VGS = 10 V, ID = 1.2 A
- Low Gate Charge (Typ. 10.5 nC)
- Low Crss (Typ. 5 pF)
- 100% Avalanche Tested
- These Devices are Pb-Free and are RoHS pliant
