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FQU3N60CTU - N-Channel MOSFET

Key Features

  • 2.4 A, 600 V, RDS(on) = 3.4 W (Max. ) @ VGS = 10 V, ID = 1.2 A.
  • Low Gate Charge (Typ. 10.5 nC).
  • Low Crss (Typ. 5 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQU3N60CTU N-Channel QFET) MOSFET 600 V, 2.4 A, 3.4 W This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 2.4 A, 600 V, RDS(on) = 3.4 W (Max.) @ VGS = 10 V, ID = 1.2 A • Low Gate Charge (Typ. 10.5 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • LCD / LED TV • Lighting • Charger / Adapter www.onsemi.