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FQU9N25 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 7.4 A, 250 V, RDS(on) = 420 mΩ (Max. ) @VGS = 10 V, ID = 3.7 A.
  • Low Gate Charge (Typ. 15.5 nC).
  • Low Crss (Typ. 15 pF).
  • 100% Avalanche Tested D G S D-PAK GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol , 5 5 , < 5 < !$ 7     Parameter    ,         2. ).
  • 63   2. 0++63     7     :  ,     7 (! .

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Datasheet Details

Part number FQU9N25
Manufacturer ON Semiconductor
File Size 0.99 MB
Description N-Channel MOSFET
Datasheet download datasheet FQU9N25 Datasheet
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Full PDF Text Transcription

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FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET FQD9N25 / FQU9N25 N-Channel QFET® MOSFET 250 V, .4 A, PΩ Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D Features • 7.4 A, 250 V, RDS(on) = 420 mΩ (Max.) @VGS = 10 V, ID = 3.7 A • Low Gate Charge (Typ. 15.5 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested D G S D-PAK GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted.
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