FW389 - Power MOSFET

onsemi

Key Features

ON-resistance Nch : RDS(on)1=165mW(typ. ).
Input Capacitance Nch : Ciss=490pF(typ. ) Pch : RDS(on)1=230mW(typ. ) Pch : Ciss=1000pF(typ. ).
4V drive.
Halogen free compliance.
Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤100ms) VDSS VGSS ID IDP Drain Current (PW≤10μs) Allowable Power Dissipatio.

FW389 power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FW389
Manufacturer	onsemi
File Size	369.51 KB
Description	Power MOSFET
Datasheet	FW389 Datasheet

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Full PDF Text Transcription (Reference)

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Ordering number : ENA2066A FW389 Power MOSFET 100V, 2A, 225mΩ, –100V, –2A, 300mΩ, Complementary Dual SOIC8 http://onsemi.com Features • ON-resistance Nch : RDS(on)1=165mW(typ.) • Input Capacitance Nch : Ciss=490pF(typ.) Pch : RDS(on)1=230mW(typ.) Pch : Ciss=1000pF(typ.) • 4V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤100ms) VDSS VGSS ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature IDP PD PT Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 EAS IAV *1 N-Channel:VDD=10V, L=2mH, IAV=2A(Fig.