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HUF75344P3 - N-Channel UltraFET Power MOSFET

Download the HUF75344P3 datasheet PDF. This datasheet also covers the HUF75344G3 variant, as both devices belong to the same n-channel ultrafet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 75A, 55V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance PSPICE and SABER Models Available on the web at: www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE DRAIN (TAB) All ON Se.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HUF75344G3-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HUF75344P3
Manufacturer onsemi
File Size 425.94 KB
Description N-Channel UltraFET Power MOSFET
Datasheet download datasheet HUF75344P3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HUF75344P3 N-Channel MOSFET Fairchild Semiconductor
HUF75344P3 N-Channel MOSFET Intersil Corporation
HUF75344A3 N-Channel UltraFET Power MOSFET Fairchild Semiconductor
HUF75344G3 N-Channel MOSFET Fairchild Semiconductor
HUF75344G3 N-Channel MOSFET Intersil Corporation

Other Datasheets by onsemi

Part Number Description
HUF75344G3 N-Channel UltraFET Power MOSFET
HUF75345G3 N-Channel Power MOSFET
HUF75345P3 N-Channel Power MOSFET
HUF75345S3S N-Channel Power MOSFET
HUF75329D3S N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Data Sheet N-Channel UltraFET Power MOSFET 55 V, 75 A, 8 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA75344.