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HUF76639S3ST-F085 - N-Channel Power MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.026Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Switching Time vs RGS Curves Ordering Information PART NUMBER.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUF76639S3ST-F085 50A, 100V, 0.026 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE Symbol HUF76639S3S D G S Features • Ultra Low On-Resistance - rDS(ON) = 0.026Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PART NUMBER PACKAGE BRAND HUF76639S3ST-F085 TO-263AB 76639S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76639S3ST.