IMD10AMT1G - Dual Bias Resistor Transistor

onsemi

Datasheet Details

Part number	IMD10AMT1G
Manufacturer	onsemi
File Size	54.07 KB
Description	Dual Bias Resistor Transistor
Datasheet	IMD10AMT1G Datasheet

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IMD10AMT1G Dual Bias Resistor Transistor NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network • High Current: IC = 500 mA max • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 50 Collector−Emitter Voltage V(BR)CEO 50 Emitter−Base Voltage V(BR)EBO 5.0 Collector Current − Continuous IC 500 THERMAL CHARACTERISTICS Vdc Vdc Vdc mAdc Characteristic Symbol Max Unit Power Dissipation* PD 285 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.