IRF530 - Power Field Effect Transistor

onsemi

Key Features

25°C 1600 1400 1200 Crss 1000 800 Ciss 600 400 200 0 10 Crss 50 5 VGS VDS Coss 10 15 20 25 GATE.
TO.
SOURCE OR DRAIN.
TO.
SOURCE.

IRF530 power field effect transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	IRF530
Manufacturer	onsemi
File Size	183.34 KB
Description	Power Field Effect Transistor
Datasheet	IRF530 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF530 Product Preview TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.