IRF530
Product Preview TMOS E- FET.™ Power Field Effect Transistor
N- Channel Enhancement- Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and mutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.
- Avalanche Energy Specified
- Source- to- Drain Diode Recovery Time parable to a Discrete
Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature http://onsemi.
TMOS POWER FET 14 AMPERES, 100 VOLTS
RDS(on) = 0.140 W
CASE 221A- 09 TO-220AB
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MAXIMUM RATINGS (TC = 25°C unless otherwise noted)...
