| Part number | IRF530 |
|---|---|
| Datasheet | IRF530-ONSemiconductor.pdf |
| File Size | 183.34 KB |
| Manufacturer | onsemi |
| Description | Power Field Effect Transistor |
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IRF530 Product Preview TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
IRF530 | N-Channel MOSFET Transistor | Inchange Semiconductor |
 |
IRF530 | N-Channel MOSFET | Motorola Inc |
 |
IRF530 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics |
 |
IRF530 | Power MOSFET | International Rectifier |
 |
IRF530 | N-Channel Power MOSFET | Fairchild Semiconductor |
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