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IRF530 Datasheet Power Field Effect Transistor

Manufacturer: onsemi

Overview: IRF530 Product Preview TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and.

Key Features

  • 25°C 1600 1400 1200 Crss 1000 800 Ciss 600 400 200 0 10 Crss 50 5 VGS VDS Coss 10 15 20 25 GATE.
  • TO.
  • SOURCE OR DRAIN.
  • TO.
  • SOURCE.

IRF530 Distributor