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ISL9R3060P2 - Diode

Download the ISL9R3060P2 datasheet PDF. This datasheet also covers the ISL9R3060G2 variant, as both devices belong to the same diode family and are provided as variant models within a single manufacturer datasheet.

General Description

optimized for low loss performance in high frequency hard switched applications.

The STEALTH family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions.

Key Features

  • Stealth Recovery, trr = 36 ns (@ IF = 30 A).
  • Max Forward Voltage, VF = 2.4 V (@ TC = 25°C).
  • 600 V Reverse Voltage and High Reliability.
  • Avalanche Energy Rated.
  • This Device is Pb.
  • Free and is RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ISL9R3060G2-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
ISL9R3060P2 30A 600V Stealth Diode Fairchild Semiconductor
ISL9R3060G2 30A 600V Stealth Diode Fairchild Semiconductor
ISL9R30120G2 30A 1200V Stealth Diode Fairchild Semiconductor
ISL9R1560G2 15A 600V Stealth Diode Fairchild Semiconductor
ISL9R1560G2_F085 Stealth Rectifier Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
ISL9R3060G2 Diode
ISL9R1560G2 Stealth Rectifier
ISL9R1560P2 Stealth Rectifier
ISL9R1560S3S Stealth Rectifier
ISL9V2540S3ST-F085C N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STEALTHt Diode 30 A, 600 V ISL9R3060G2, ISL9R3060P2 Description The ISL9R3060G2, ISL9R3060P2 is a STEALTH t diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry.