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ISL9V3040P3-F085C - N-Channel IGBT

Download the ISL9V3040P3-F085C datasheet PDF. This datasheet also covers the ISL9V3040D3ST-F085C variant, as both devices belong to the same n-channel igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • SCIS Energy = 300 mJ at TJ = 25°C.
  • Logic Level Gate Drive.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ISL9V3040D3ST-F085C-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT ISL9V3040x3ST-F085C Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse 24 V Battery Condition (IC = 10 mA) ESCIS25 ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ESCIS150 ISCIS = 10.6 A, L = 3.0 mHy, RGE = 1 KW, TC = 150°C (Note 2) IC25 Collector Current Continuous at VGE = 4.