• Part: ISL9V5036S3S
  • Description: N-Channel IGBT
  • Manufacturer: onsemi
  • Size: 424.12 KB
Download ISL9V5036S3S Datasheet PDF
onsemi
ISL9V5036S3S
ISL9V5036S3S is N-Channel IGBT manufactured by onsemi.
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Eco SPARK® 500m J, 360V, N-Channel Ignition IGBT General Description The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next generation IGBTs that offer outstanding SCIS capability in the D²Pak (TO-263) and TO-220 plastic package. These devices are intended for use in automotive ignition circuits, specifically as coil drivers. Internal diodes provide voltage clamping without the need for external ponents. Eco SPARK® devices can be custom made to specific clamp voltages. Contact your nearest ON Semiconductor sales office for more information. Formerly Developmental Type 49443 Applications - Automotive Ignition Coil Driver Circuits - Coil-On Plug Applications Features - Industry Standard D2-Pak package - SCIS Energy = 500m J at TJ = 25o C - Logic Level Gate Drive - Qualified to AEC Q101 - Ro HS pliant Package JEDEC TO-263AB D²-Pak Symbol JEDEC TO-220AB JEDEC TO-262AA GATE COLLECTOR (FLANGE) COLLECTOR (FLANGE) Device Maximum Ratings TA = 25°C unless otherwise noted Symbol BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ TSTG TL Tpkg ESD Parameter Collector to Emitter Breakdown Voltage (IC = 1 m A) Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 m A) At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 µHy At Starting TJ = 150°C, ISCIS = 30A, L = 670 µHy Collector Current Continuous, At TC = 25°C, See Fig 9 Collector Current Continuous, At TC = 110°C, See Fig 9 Gate to Emitter Voltage...