KAF-09000-ABA Datasheet | onsemi

KAF-09000 3056 (H) x 3056 (V) Full Frame CCD Image Sensor Description bining high resolution with outstanding sensitivity, the KAF- 09000 image sensor has been specifically designed to meet the needs of next- generation low cost digital radiography and scientific imaging systems. The high sensitivity available from 12- micron square pixels bines with a low noise architecture to allow system designers to improve overall image quality, or to relax system tolerances to achieve lower cost. The excellent uniformity of the KAF- 09000 image sensor improves overall image integrity by simplifying image corrections, while integrated anti- blooming protection prevents image bleed from over- exposure in bright areas of the image. To simplify device integration, the KAF- 09000 image sensor uses the same pin- out and package as the KAF- 16801 image sensor. The sensor utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity pared to the use of a standard front- side illuminated polysilicon electrode. Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Architecture Full Frame CCD [Square Pixels] Total Number of Pixels 3103 (H) x 3086 (V) = 9.6 Mp Number of Effective Pixels 3085 (H) x 3085 (V) = 9.5 Mp Number of Active Pixels 3056 (H) x 3056 (V) = 9.3 Mp Pixel Size Active Image Size 12 mm (H) x 12 mm (V) 36.7 mm (H) x 36.7 mm (V) 51.9 mm diagonal, 645 1.3x optical format Aspect Ratio Square Horizontal Outputs Saturation Signal Output Sensitivity Quantum Efficiency (550 nm) Responsivity (550 nm) Read Noise (f = 3 MHz) 1 110 ke- 24 m V/e- 64% 2595 ke/m J/cm2 62.3 V/m J/cm2 7 e- Dark Signal (T = 25°C) 5 e/pix/sec Dark Current Doubling Temperature 7°C Linear Dynamic Range (f = 4 MHz) 84 d B Blooming Protection (4 ms exposure time) > 100 X saturation exposure Maximum Data...