The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
DATA SHEET www.onsemi.com
PNP Epitaxial Silicon Transistor
KSA1010
High Speed High Voltage Switching
Industrial Use Complement to KSC2334
1 2 3
TO−220−3LD CASE 340AT
1. Base 2. Collector 3. Emitter
ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted.)
Symbol
Parameter
Ratings
Unit
VCBO Collector−Base Voltage
−100
V
VCEO Collector−Emitter Voltage
−100
V
VEBO Emitter−Base Voltage
−7
V
IC
Collector Current (DC)
−7
A
ICP
Collector Current (Pulse) (Note 1)
−15
A
IB
Base Current
−3.5
A
PC
Collector Dissipation (TC = 25C)
40
W
Collector Dissipation (TA = 25C)
1.5
W
TJ
Junction Temperature
150
C
TSTG Storage Temperature
−55 to 150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device.
KSA1010 Datasheet
